Tuesday, August 7, 2012

1104.4553 (Ahmed El Halawany et al.)

Decoherence-assisted electron trapping in a quantum dot    [PDF]

Ahmed El Halawany, Michael N. Leuenberger
We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence in the central quantum dot (QD) of a semiconductor nanowire (NW) made of five QDs, between 100 K and 300 K. The electron's dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction (ELOPI). Based on this configuration, the probability to trap an electron with no decoherence is almost 58%. In contrast, the probability to trap an electron with decoherence is 83% at 100 K, 74% at 200 K and 67% at 300 K. Our model provides a novel method of trapping an electron efficienctly at room temperature, which could be used as an electrically driven single photon source (SPS) operating in the wavelength range of \lambda = 1.3 - 1.5 \mu m between 100 K and 300 K.
View original: http://arxiv.org/abs/1104.4553

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