1208.5135 (G. Zhao et al.)

Buried heterostructure vertical-cavity surface-emitting laser with
semiconductor mirrors    [PDF]

G. Zhao, Y. Zhang, D. G. Deppe, K. Konthasinghe, A. Muller

We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded $Q\approx$ 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at $T$ = 40 K) lasing was obtained with an incident optical power as low as $P_{\rm th}$ = 10 mW ($\lambda_{\rm p}$ = 808 nm). The laser linewidth was found to be $\approx$3 GHz at $P_{\rm p}\approx$ 5 $P_{\rm th}$.

View original: http://arxiv.org/abs/1208.5135