John King Gamble, M. A. Eriksson, S. N. Coppersmith, Mark Friesen
Quantum dots in silicon are promising candidates for implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these devices. Here we introduce a novel, systematic effective mass theory of valley-orbit coupling in disordered silicon systems. This theory reveals valley-orbit hybridization effects that are detrimental for storing quantum information in the valley degree of freedom, including non-vanishing dipole matrix elements between valley states and altered intervalley tunneling.
View original:
http://arxiv.org/abs/1305.0488
No comments:
Post a Comment