Erik Nielsen, Rajib Rahman, Richard P. Muller
We present a method which computes many-electron energies and eigenfunctions
by a full configuration interaction which uses a basis of atomistic
tight-binding wave functions. This approach captures electron correlation as
well as atomistic effects, and is well suited to solid state quantum dot
systems containing few electrons, where valley physics and disorder contribute
significantly to device behavior. Results are reported for a two-electron
silicon double quantum dot as an example.
View original:
http://arxiv.org/abs/1202.4931
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